2sK3934 2004 - 12 - 03 1 toshiba field effect transistor silicon n channel mos type ( ?? - mosvi) 2sK3934 switching regulator applications low drain - source on resistance: r ds (on) = 0.23 ?? (typ.) high forward transfer admittance: | y fs | = 8.2 s (typ.) low leakage current: i d ss = 100 ? a (v ds = 500 v) enhancement - mode: v th = 2.0 ~ 4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings ( ta = 25 c) characteristics symbol rating unit drain - source voltage v dss 500 v drain - gate voltage (r gs = 20 k w ) v dgr 500 v gate - source voltage v gss 30 v dc (note 1) i d 15 drain current pulse (t = 1 ms) (note 1) i dp 60 a drain power dissipation (tc = 25 c) p d 50 w single pulse avalanche energy (note 2) e as 1.08 j avalanche current i ar 15 a repetitive avalanche energy (note 3) e ar 5.0 mj channel temperature t ch 150 c storage temperature range t stg - 55~ 150 c thermal characteristics characteristics s ymbol max unit thermal resistance, channel to case r th (ch - c) 2.5 c/w thermal resistance, channel to ambient r th (ch - a) 62.5 c/w note 1: please use devices on conditions that the channel temperature is below 150 c. note 2: v dd = 90 v, t ch = 25 c(initi al), l = 8.16mh, i ar = 15 a, r g = 25 w note 3: repetitive rating: pulse width limited by maximum channel temperature this transistor is an electrostatic sensitive device. please handle with caution. unit: mm 1: gate 2: drain 3: source jedec ? jeita sc - 67 toshiba 2 - 10u1b weight : 1.7 g (typ.) 1 3 2
2sK3934 2004 - 12 - 03 2 electrical characteristics (ta = 25 c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 25 v, v ds = 0 v ? ? 10 m a gate - source breakdown voltage v (br) gss i g = 10 m a, v ds = 0 v 30 ? ? v drain cut - off current i dss v ds = 500 v, v gs = 0 v ? ? 100 m a drain - source bre akdown voltage v (br) dss i d = 10 ma, v gs = 0 v 500 ? ? v gate threshold voltage v th v ds = 10 v, i d = 1 ma 2.0 ? 4.0 v drain - source on resistance r ds (on) v gs = 10 v, i d = 7.5 a ? 0.23 0.3 w forward transfer admittance ? y fs ? v ds = 10 v, i d = 7.5 a 2.3 8 .2 ? s input capacitance c iss ? 3100 ? reverse transfer capacitance c rss ? 20 ? output capacitance c oss v ds = 25 v, v gs = 0 v, f = 1 mhz ? 270 ? pf rise time t r ? 70 ? turn - on time t on ? 130 ? fall time t f ? 70 ? switching time turn - off time t off ? 280 ? ns total gate charge q g ? 62 ? gate - source charge q gs ? 40 ? gate - drain charge q gd v dd ~ - 400 v, v gs = 10 v, i d = 15a ? 22 ? nc source - drain ratings and characteristics (ta = 25 c) characteris tics symbol test condition min typ. max unit continuous drain reverse current (note 1) i dr ? ? ? 15 a pulse drain reverse current (note 1) i drp ? ? ? 60 a forward voltage (diode) v dsf i dr = 15a, v gs = 0 v ? ? - 1.7 v reverse recovery time t rr ? 1.3 ? m s reverse recovery charge q rr i dr = 15 a, v gs = 0 v, di dr /dt = 100 a/ m s ? 18 ? m c marking r l = 26 w 0 v 10 v v gs v dd ~ - 200 v i d = 7.5 a v out 50 w dut y < = 1%, t w = 10 m s lot no. a line indicates lead (pb) - free package or lead ( pb) - free finish. K3934 part no. (or abbreviation code )
2sK3934 2004 - 12 - 03 3 drain current i d (a) r ds (on) ? i d drain - source on resistance r ds (on) (m w ) drain - source voltage v ds (v) i d ? v ds drain current i d (a) 20 8 0 16 4 drain - source voltage v ds (v) i d ? v ds drain current i d (a) gate - source voltage v gs (v) i d ? v gs drain current i d (a) 0 0 2 4 6 8 10 20 5 0 10v 30 40 10 gate - sou rce voltage v gs (v) v ds ? v gs 0 6 8 10 0 4 8 12 16 20 12 4 2 drain current i d (a) ? y fs ? ? i d forward transient admittance ? y fs ? (s) 10 1 10 100 100 1000 0.1 10 100 0.1 100 10 0 2 4 8 common source tc = 25 c pulse test 10 40 30 20 10 0 50 0 8 20 common source tc = 25 c pulse test 6.2v 7v 6.6v 16 12 4 v gs = 5v 8v 6.4v 5.8v 5.4v 6v 7v 7.5v 8v 6.5v common source tc = 25 ?? pulse test i d = 15 a i d = 7.5 a i d = 3.8 a v gs = 10 v common source tc = 25 c pulse test tc = - 55 c 100 25 6 drain - source voltage v ds (v) common source v ds = 20 v pulse test tc = 2 5 c tc = 100 c tc = - 55 c 6v 6.8v 10v v gs = 5 v common source v ds = 20 v pulse test 1 1
2sK3934 2004 - 12 - 03 4 drain - source voltage v ds (v) c ? v ds capacitance c (pf) 10 0.1 100 1000 10000 1 10 100 case temperature tc ( c) r ds (on) ? tc drain - source on resistance r ds (on) (m w ) 160 - 40 0 40 80 120 - 80 1000 800 600 400 20 0 0 total gate charge q g (nc) dynamic input/output characteristics drain - source voltage v ds (v) gate threshold voltage v th (v) case temperature tc ( c) v th ? tc 0 1 2 3 5 - 80 - 40 0 40 80 120 160 4 drain power dissipation p d (w) case temperature tc ( c) p d ? tc 80 40 0 0 40 80 120 160 20 60 drain - source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) 0 0.1 1 10 100 - 0.8 - 1.2 - 1.6 - 0.4 0 60 80 100 500 400 0 40 20 8 4 16 20 0 common source v gs = 10 v pulse test i d = 15a 7.5 3.8 common source v ds = 10 v i d = 1 ma pulse test common source v gs = 0 v f = 1 mhz tc = 25 c c iss c oss c rss common source tc = 25 c pulse test 5 3 1 v gs = 0 v 10 gate - source voltage v gs (v) v ds v gs v dd = 100 v 200v 400v common source i d = 15 a tc = 25 c pulse test 12 300 200 100
2sK3934 2004 - 12 - 03 5 - 15 v 15 v test circuit wave form i ar b vdss v dd v ds r g = 25 w v dd = 90 v, l = 8.13 mh ? ? ? ? ? - = v dd b vdss b vdss 2 i l 2 1 ? as channel temperature (initial) t ch ( c) e as ? t ch avalanche energy e as (mj) 1200 1000 800 600 200 0 25 50 75 100 125 150 r th ? t w pulse width t w (s) normalized transient thermal impedance r th (t) /r th (ch - c) 0.01 10 ? 0.1 1 10 100 ? 1 ?? 10 ?? 100 ?? 1 10 0.001 drain - source voltage v ds (v) safe operating area drain current i d (a) 0.1 1 1 10 100 10 1000 100 0.01 duty=0.5 0.2 0.1 0.05 0.02 0.01 single pulse * si ngle nonrepetitive pulse t c = 25c curves must be derated linealy with increase in temperature dc operation tc = 25 c 1 ms * v dss max i d max (continuous) * i d max (pulsed) * 100 m s * t p dm t duty = t/t r th (ch - c) = 2.5 c/w 400
2sK3934 2004 - 12 - 03 6 the information contained herein is subject to change without notice. the i nformation contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is grante d by implication or otherwise under any patent or patent rights of toshiba or others. toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to the ir inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system , and to avoid situations i n which a malfunction or failure of such toshiba product s could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the m ost recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ? handling guide for semiconductor devices, ? or ?toshiba semiconductor reliability h andbook? etc.. the toshiba products listed in this docu ment are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in eq uipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ( ? unintended usage ? ). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer ? s own r isk. toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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